Reconfigurable dipole-induced resistive switching of MoS2 thin-layers on Nb:SrTiO3.
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DOI: 10.1021/acsami.9b15097
Abstract: The controllable bandgap and charge-trapping capability of MoS2 renders it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb:SrTiO3… read more here.
Keywords: switching mos2; induced resistive; dipole induced; mos2 ... See more keywords