Induction of half-metallic ferromagnetism in BaS semiconductor via Cr-doping
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DOI: 10.1016/j.vacuum.2020.109760
Abstract: Abstract We have investigated the structural, electronic and magnetic properties of Cr-doped BaS for doping concentrations, x = 0.06, 0.12 and 0.25, using full potential linearized augmented plane wave (FP-LAPW) method. Our results reveal that resultant Ba1-xCrxS… read more here.
Keywords: half metallic; ferromagnetism bas; bas semiconductor; half ... See more keywords