Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices
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DOI: 10.1109/tie.2021.3076705
Abstract: This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN high electron mobility transistor (HEMT), ohmic gate p-GaN HEMT with hybrid drain, and Cascode… read more here.
Keywords: switching devices; power; inductive switching; gan ... See more keywords