Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
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DOI: 10.1063/1.5041924
Abstract: We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence… read more here.
Keywords: aln interlayer; influence aln; aln; photovoltaic properties ... See more keywords