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Published in 2017 at "Solid State Communications"
DOI: 10.1016/j.ssc.2017.04.002
Abstract: Abstract Combining photoconductivity and photoluminescence measurements we have studied the band bending behavior with the Li-doping content in ZnO microwires. Our results reveal the presence of in-gap acceptor levels with energies ranging from 100 meV to…
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Keywords:
zno microwires;
influence band;
photoconductivity;
band bending ... See more keywords