Influence of the Formation Temperature of the Morphology of por-Si Formed by Pd-Assisted Chemical Etching
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DOI: 10.1134/s1063782620080229
Abstract: The process of the Pd-assisted etching of silicon in a solution containing HF and H2O2 is investigated. It is shown that the morphology of the forming layers is affected by such factors as the etching… read more here.
Keywords: temperature; formation temperature; assisted etching; morphology ... See more keywords