Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors
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DOI: 10.3390/ma15031062
Abstract: The encapsulation of single-layer 2D materials within hBN has been shown to improve the mobility of these compounds. Nevertheless, the interplay between the semiconductor channel and the surrounding dielectrics is not yet fully understood, especially… read more here.
Keywords: properties mos2; influence hbn; transport properties; hbn ... See more keywords