Influence of ionisation track structure on 20 nm FDSOI transistor
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DOI: 10.1016/j.microrel.2021.114179
Abstract: Abstract The response of a 20-nm fully depleted silicon on insulator (FDSOI) transistor under irradiation by heavy ions is analysed using GEometry ANd Tracking (Geant4) and Synopsys Sentaurus device simulations. Because of the huge energy… read more here.
Keywords: track structure; influence ionisation; fdsoi transistor; energy ... See more keywords