A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam
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DOI: 10.1134/s1063785018040181
Abstract: New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the… read more here.
Keywords: influence probing; depth resolution; ion; beam ... See more keywords