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Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.11.008
Abstract: Abstract AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being greater in the on-axis…
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Keywords:
algan gan;
sic substrate;
axis case;
gan heterostructures ... See more keywords
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Published in 2020 at "Journal of Asian Ceramic Societies"
DOI: 10.1080/21870764.2020.1847425
Abstract: ABSTRACT In this work, ZrB2–SiC and novel C3N4-doped ZrB2–SiC composites were manufactured at 1850°C under an external load of 40 MPa for 6 min via spark plasma sintering. The effects of C3N4 on the mechanical…
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Keywords:
influence sic;
zrb2 sic;
zrb2;
c3n4 ... See more keywords