Substrate temperature influenced ZrO2 films for MOS devices
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DOI: 10.1002/sia.6775
Abstract: The effect of substrate temperature on the direct current magnetron‐sputtered zirconium oxide (ZrO2) dielectric films was investigated. Stoichiometric of the ZrO2 thin films was obtained at an oxygen partial pressure of 4.0 × 10−2 Pa.… read more here.
Keywords: temperature influenced; substrate temperature; temperature; influenced zro2 ... See more keywords