Sign Up to like & get
recommendations!
0
Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abdc9e
Abstract: Nitrogen-vacancy (NCVSi −) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi − center formation in N-doped 4H-SiCs by hydrogen…
read more here.
Keywords:
irradiation;
ion irradiation;
hydrogen ion;
formation ... See more keywords