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Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5108743
Abstract: We investigated two types of threading dislocations in high Al-composition Al0.55Ga0.45N/AlN multiple quantum well (MQW) structures grown on AlN substrate for electrically injected deep ultraviolet light-emitting diodes (LEDs). The surface morphology and defects electrical characteristics…
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Keywords:
algan aln;
electroluminescence algan;
influences screw;
electroluminescence ... See more keywords