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Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.02.015
Abstract: Abstract We developed a method to calculate the dark current of quantum-well infrared photodetectors without the need to fit any experimental data or to perform extra transport measurements on other samples. The temperature range of…
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Keywords:
infrared photodetectors;
simulation dark;
well infrared;
dark current ... See more keywords
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Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c20742
Abstract: Near-infrared photodetectors (NIR-PDs) are widely used in communications, biomedical imaging, and national defense. Here we report a new strategy to prepare a short wavelength light filter based NIR-PDs by introducing an interface layer between the…
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Keywords:
infrared photodetectors;
polymer;
short wavelength;
wavelength light ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c01046
Abstract: PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD infrared photodetectors by doping charge-trapping material into…
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Keywords:
quantum;
charge self;
large photomultiplication;
infrared photodetectors ... See more keywords
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Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr02991b
Abstract: Recently, a zipper two-dimensional (2D) material Bi2O2Se belonging to the layered bismuth oxychalcogenide (Bi2O2X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D materials for high-performance electronic…
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Keywords:
bi2o2s nanosheets;
nanosheet near;
ultrathin bi2o2s;
infrared photodetectors ... See more keywords
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Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc04330c
Abstract: Because of the tunable bandgap, high carrier mobility and strong interaction with light, ternary III–V nanowires (NWs) have been demonstrated with tremendous potential for advanced electronics and optoelectronics. However, their further performance enhancement and practical…
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Keywords:
ingaas nanowires;
photodetectors based;
infrared photodetectors;
near infrared ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0010273
Abstract: In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices. At 77 K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 μm, corresponding to…
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Keywords:
wavelength infrared;
infrared photodetectors;
ion implantation;
zinc ion ... See more keywords
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Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acc1eb
Abstract: Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light–matter interaction, and high carrier…
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Keywords:
snse nrs;
near infrared;
fast near;
photodetectors type ... See more keywords
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Published in 2018 at "Laser Physics"
DOI: 10.1088/1555-6611/aab451
Abstract: Two photodiode (PD) designs incorporating graphene oxide (GO) and reduced graphene oxide (rGO) are proposed and fabricated. Both PDs have 50 mm thick silver electrodes deposited on the active area, and another electrode consisting of…
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Keywords:
graphene oxide;
photodetectors based;
infrared photodetectors;
based reduced ... See more keywords
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Published in 2018 at "IEEE Journal of Selected Topics in Quantum Electronics"
DOI: 10.1109/jstqe.2017.2703307
Abstract: The technology of quantum-well infrared photodetectors has been used to fabricate focal plane arrays as the active element of infrared cameras. These arrays must be cooled down to 77 K due to the large dark…
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Keywords:
temperature;
infrared photodetectors;
laterally biased;
well infrared ... See more keywords
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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2759230
Abstract: A novel lateral infrared photodetector was demonstrated using 3-D structures comprising of zinc-oxide nanowire (NW) cores and hydrogenated amorphous silicon (a-Si:H) thin-film shell. The 3-D infrared photodetectors showed a low dark current of ~10−11–10−12 A…
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Keywords:
infrared photodetectors;
thin film;
sup;
sup sup ... See more keywords