Microstructural Characterization of Multilayer Metal Stack on InGaAs/InP Contact
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08226-3
Abstract: Al/InGaAs, Al/Ti/InGaAs, and Al/Ni/InGaAs contacts were prepared by conducting rapid thermal annealing at different temperatures, and the interfacial reaction was characterized using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The specific contact resistivity… read more here.
Keywords: stack; microscopy; ingaas; metal ... See more keywords
Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
Sign Up to like & getrecommendations! Published in 2018 at "Scientific Reports"
DOI: 10.1038/s41598-018-25841-7
Abstract: The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications.… read more here.
Keywords: structural properties; ingaas; gaas; photoluminescence ... See more keywords
In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac45c5
Abstract: In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact… read more here.
Keywords: ingaas; plane ingaas; molecular beam; tunnel ... See more keywords
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-018-2690-3
Abstract: We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core–shell interface induced by the large lattice mismatch between the InGaAs… read more here.
Keywords: core shell; inp; ingaas; shell ... See more keywords
Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator.
Sign Up to like & getrecommendations! Published in 2019 at "Optics letters"
DOI: 10.1364/ol.44.000767
Abstract: A compact, efficient, and monolithically grown III-V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) Si wafers using thick metamorphic buffers are… read more here.
Keywords: ingaas; 001 silicon; silicon insulator; ingaas nanolaser ... See more keywords
A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091474
Abstract: A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in… read more here.
Keywords: effect; ingaas; ingaas gaassb; gate ... See more keywords
Suppression of the Electrical Crosstalk of Planar-Type High-Density InGaAs Detectors with a Guard Hole
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13101797
Abstract: The resolution of InGaAs FPA detectors is degraded by the electrical crosstalk, which is especially severe in high–density FPAs. We propose a guard-hole structure to suppress the electrical crosstalk in a planar-type 640 × 512… read more here.
Keywords: guard hole; ingaas; density; electrical crosstalk ... See more keywords