Role of quantum capacitance on the random dopant fluctuation induced threshold voltage variability in junctionless InGaAs FinFETs
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107862
Abstract: Abstract This paper reports an investigation of the effects of varying different device parameters on the random-dopant-fluctuation (RDF) induced threshold voltage variability (σVT) in junctionless (JL) InGaAs FinFETs. Such investigation is made by means of… read more here.
Keywords: induced threshold; ingaas finfets; threshold voltage; dopant fluctuation ... See more keywords
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
Sign Up to like & getrecommendations! Published in 2018 at "Materials"
DOI: 10.3390/ma12010087
Abstract: III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors… read more here.
Keywords: integrated silicon; oxide cavities; ingaas finfets; source drain ... See more keywords