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Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125970
Abstract: Abstract Tensile-strained InGaAs and GaAsSb layers have potential as strain-compensation layers for tunneling field-effect-transistors containing compressively strained InGaAs channel layers. Here, we compare structural and photoluminescence properties between 1% tensile-strained InGaAs and GaAsSb layers grown…
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Keywords:
tensile strained;
structural photoluminescence;
gaassb layers;
ingaas gaassb ... See more keywords
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Published in 2017 at "Physics of the Solid State"
DOI: 10.1134/s1063783417110336
Abstract: The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160…
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Keywords:
gaas quantum;
bilayer ingaas;
heterostructures bilayer;
gaassb gaas ... See more keywords
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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091474
Abstract: A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in…
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Keywords:
effect;
ingaas;
ingaas gaassb;
gate ... See more keywords
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Published in 2018 at "Photonics"
DOI: 10.3390/photonics5040032
Abstract: InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser…
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Keywords:
surface emitting;
crystal surface;
photonic crystal;
ingaas gaassb ... See more keywords