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   Articles with "ingaas gaassb" as a keyword



Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates

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recommendations! Published in 2021 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2020.125970

Abstract: Abstract Tensile-strained InGaAs and GaAsSb layers have potential as strain-compensation layers for tunneling field-effect-transistors containing compressively strained InGaAs channel layers. Here, we compare structural and photoluminescence properties between 1% tensile-strained InGaAs and GaAsSb layers grown… read more here.

Keywords: tensile strained; structural photoluminescence; gaassb layers; ingaas gaassb ... See more keywords

Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

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recommendations! Published in 2017 at "Physics of the Solid State"

DOI: 10.1134/s1063783417110336

Abstract: The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160… read more here.

Keywords: gaas quantum; bilayer ingaas; heterostructures bilayer; gaassb gaas ... See more keywords

pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice.

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recommendations! Published in 2024 at "Optics letters"

DOI: 10.1364/ol.543761

Abstract: An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb… read more here.

Keywords: photodetector; short wavelength; wavelength infrared; wavelength ... See more keywords

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect

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recommendations! Published in 2022 at "Micromachines"

DOI: 10.3390/mi13091474

Abstract: A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper. InGaAs/GaAsSb heterojunction is applied in… read more here.

Keywords: effect; ingaas; ingaas gaassb; gate ... See more keywords

Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb 'W'-Type Quantum Wells Grown on InP Substrate

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recommendations! Published in 2018 at "Photonics"

DOI: 10.3390/photonics5040032

Abstract: InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser… read more here.

Keywords: surface emitting; crystal surface; photonic crystal; ingaas gaassb ... See more keywords