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Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.01.044
Abstract: Abstract Uniform strain relaxation and defect densities across the entire wafer are important aspects of lattice-mismatched or metamorphic epitaxy of semiconductors. Achieving this requires an understanding of the sources of dislocations that lead to relaxation.…
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Keywords:
sources wafer;
dislocation;
ingaas graded;
dislocation sources ... See more keywords