Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
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DOI: 10.1016/j.jcrysgro.2019.01.044
Abstract: Abstract Uniform strain relaxation and defect densities across the entire wafer are important aspects of lattice-mismatched or metamorphic epitaxy of semiconductors. Achieving this requires an understanding of the sources of dislocations that lead to relaxation.… read more here.
Keywords: sources wafer; dislocation; ingaas graded; dislocation sources ... See more keywords