DC AND RF CHARACTERISTICS FLUCTUATION OF INALAS/INGAAS HEMTS ACCORDING TO THE OPERATING TEMPERATURE VARIATION
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DOI: 10.21660/2017.34.2659
Abstract: InAlAs/InGaAs high electron mobility transistors (HEMTs) are a type of field effect transistor that can achieve extremely high high-frequency gain owing to quantum effects operating in the channel layer. HEMTs are important components for devices… read more here.
Keywords: high frequency; temperature; ingaas hemts; frequency ... See more keywords