Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure
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DOI: 10.1080/10420150.2019.1644639
Abstract: ABSTRACT The effect of traps to C–V and I–V plots of InP/InGaAs heterostructure with 3 MeV proton irradiation at different fluences has been discussed. After proton irradiation, the total reverse capacitance increases, which does not only… read more here.
Keywords: proton irradiation; irradiation different; inp ingaas; ingaas heterostructure ... See more keywords