Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5079697
Abstract: We propose, fabricate, and evaluate strain-induced InGaAs/InAlAs superlattice (SL), which can efficiently radiate broadband terahertz (THz) waves. By means of optical pump-probe measurements, we demonstrate ultrashort photocarriers relaxation times of τ ∼ 1.7 ps without… read more here.
Keywords: ingaas inalas; photoconductive layers; residual strain; ingaas photoconductive ... See more keywords
The influence of Fröhlich interaction on intersubband transitions of InGaAs/InAlAs-based quantum cascade detector structures investigated by infrared modulated photoluminescence
Sign Up to like & getrecommendations! Published in 2023 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/40/7/077503
Abstract: We demonstrate the use of an infrared modulated photoluminescence (PL) method based on step-scan Fourier-transform infrared spectrometer to analyze intersubband transition (ISBT) of InGaAs/InAlAs quantum cascade detector (QCD) structures. By configuring oblique and parallel excitation… read more here.
Keywords: transitions ingaas; quantum cascade; modulated photoluminescence; cascade detector ... See more keywords
A theoretical study of the optical Stark effect in InGaAs/InAlAs quantum dots
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/32/2/025014
Abstract: In this paper, we examine the three-level optical Stark effect of excitons in InGaAs/InAlAs quantum dots using renormalized wavefunction formulation. The system was assumed to be irradiated by two lasers in which a strong laser… read more here.
Keywords: ingaas inalas; stark effect; effect; optical stark ... See more keywords
Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices
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DOI: 10.1364/ome.7.004408
Abstract: Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP… read more here.
Keywords: ingaas inalas; sacrificial layers; release inp; layers release ... See more keywords
InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93 μm
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/ab017f
Abstract: Utilizing the high efficiency of the localized carrier extraction in the low-dimensional semiconductors within a PN junction, an InP-based InAs/InGaAs/InAlAs interband quantum well infrared photodetector has been investigated. Although the thermal energy is much less… read more here.
Keywords: photodetector; inalas interband; ingaas inalas; inas ingaas ... See more keywords