Microstructural Characterization of Multilayer Metal Stack on InGaAs/InP Contact
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DOI: 10.1007/s11664-020-08226-3
Abstract: Al/InGaAs, Al/Ti/InGaAs, and Al/Ni/InGaAs contacts were prepared by conducting rapid thermal annealing at different temperatures, and the interfacial reaction was characterized using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The specific contact resistivity… read more here.
Keywords: stack; microscopy; ingaas; metal ... See more keywords