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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2016.07.094
Abstract: Abstract In this work, we have characterized by transmission electron microscopy techniques the structural properties of InAlAsSb/InGaAs/InP heterostructures, with target applications in high efficiency solar cells. Previous photoluminescence (PL) 1 analysis suggested the existence of…
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Keywords:
inp heterostructures;
microscopy;
layer;
inalassb ingaas ... See more keywords
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Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2020.104576
Abstract: Abstract III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well…
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Keywords:
array;
highly uniform;
emitting diodes;
light emitting ... See more keywords
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Published in 2019 at "Nano letters"
DOI: 10.1021/acs.nanolett.9b00959
Abstract: We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the…
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Keywords:
inp quantum;
ingaas inp;
nanowire;
quantum well ... See more keywords
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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4999646
Abstract: The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from…
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Keywords:
inp avalanche;
dark current;
large dark;
current increase ... See more keywords
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Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5030141
Abstract: The available high speed InGaAs/InP-based single-photon avalanche detectors (SPAD) are normally worked at fixed gate or narrow tunable gate frequency. However, a wide tunable gate frequency or even free running single photon detectors at high…
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Keywords:
frequency;
gate;
room temperature;
single photon ... See more keywords
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Published in 2019 at "Technical Physics Letters"
DOI: 10.1134/s1063785019110075
Abstract: A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs…
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Keywords:
higher breakdown;
high electron;
inalas ingaas;
breakdown characteristics ... See more keywords
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Published in 2019 at "Journal of Communications Technology and Electronics"
DOI: 10.1134/s1064226919090055
Abstract: A Russian-made focal plane array (FPA) for gated imager working in the short-wave IR range is presented. The FPA contains an array of p–i–n photodiodes based on a 320 × 256 InGaAs/InP heterostructure with a…
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Keywords:
wave range;
range;
short wave;
plane array ... See more keywords
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Published in 2019 at "Applied optics"
DOI: 10.1364/ao.58.005339
Abstract: Based on results from the Silvaco Atlas device simulation software, a separate absorption grading charge multiplication InGaAs/InP avalanche photodiode has been modeled. The Shockley-Read-Hall current, avalanche amplification current, trap-assisted tunneling current, and band-to-band direct tunneling…
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Keywords:
dark current;
inp avalanche;
current components;
multiplication ... See more keywords
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Published in 2017 at "Optics express"
DOI: 10.1364/oe.25.014611
Abstract: We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a large…
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Keywords:
ingaas inp;
detector;
free running;
photon detector ... See more keywords
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Published in 2022 at "Optics express"
DOI: 10.1364/oe.444536
Abstract: InGaAs/InP single-photon avalanche diodes (SPADs) are nowadays employed in many photon-counting applications in the near-infrared range. Photon detection efficiency (PDE) is one of the most important parameters of these detectors and here we present a…
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Keywords:
model;
photon detection;
detection efficiency;
ingaas inp ... See more keywords
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Published in 2019 at "Photonics Research"
DOI: 10.1364/prj.7.0000a1
Abstract: InGaAs/InP avalanche photodiodes typically work in the gated Geiger mode to achieve near-infrared single-photon detection. By using ultrashort gates and combining with the robust spike-canceling technique that consists of the capacitance-balancing and low-pass filtering technique,…
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Keywords:
inp single;
ingaas inp;
single photon;