Articles with "ingaas inp" as a keyword



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Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

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Published in 2017 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2016.07.094

Abstract: Abstract In this work, we have characterized by transmission electron microscopy techniques the structural properties of InAlAsSb/InGaAs/InP heterostructures, with target applications in high efficiency solar cells. Previous photoluminescence (PL) 1 analysis suggested the existence of… read more here.

Keywords: inp heterostructures; microscopy; layer; inalassb ingaas ... See more keywords
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Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

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Published in 2020 at "Nano Energy"

DOI: 10.1016/j.nanoen.2020.104576

Abstract: Abstract III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well… read more here.

Keywords: array; highly uniform; emitting diodes; light emitting ... See more keywords
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Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes.

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Published in 2019 at "Nano letters"

DOI: 10.1021/acs.nanolett.9b00959

Abstract: We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the… read more here.

Keywords: inp quantum; ingaas inp; nanowire; quantum well ... See more keywords
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Origin of large dark current increase in InGaAs/InP avalanche photodiode

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Published in 2018 at "Journal of Applied Physics"

DOI: 10.1063/1.4999646

Abstract: The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from… read more here.

Keywords: inp avalanche; dark current; large dark; current increase ... See more keywords
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Room temperature continuous frequency tuning InGaAs/InP single-photon detector

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Published in 2018 at "AIP Advances"

DOI: 10.1063/1.5030141

Abstract: The available high speed InGaAs/InP-based single-photon avalanche detectors (SPAD) are normally worked at fixed gate or narrow tunable gate frequency. However, a wide tunable gate frequency or even free running single photon detectors at high… read more here.

Keywords: frequency; gate; room temperature; single photon ... See more keywords
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InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

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Published in 2019 at "Technical Physics Letters"

DOI: 10.1134/s1063785019110075

Abstract: A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs… read more here.

Keywords: higher breakdown; high electron; inalas ingaas; breakdown characteristics ... See more keywords
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Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range

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Published in 2019 at "Journal of Communications Technology and Electronics"

DOI: 10.1134/s1064226919090055

Abstract: A Russian-made focal plane array (FPA) for gated imager working in the short-wave IR range is presented. The FPA contains an array of p–i–n photodiodes based on a 320 × 256 InGaAs/InP heterostructure with a… read more here.

Keywords: wave range; range; short wave; plane array ... See more keywords
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Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes.

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Published in 2019 at "Applied optics"

DOI: 10.1364/ao.58.005339

Abstract: Based on results from the Silvaco Atlas device simulation software, a separate absorption grading charge multiplication InGaAs/InP avalanche photodiode has been modeled. The Shockley-Read-Hall current, avalanche amplification current, trap-assisted tunneling current, and band-to-band direct tunneling… read more here.

Keywords: dark current; inp avalanche; current components; multiplication ... See more keywords
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Fully integrated free-running InGaAs/InP single-photon detector for accurate lidar applications.

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Published in 2017 at "Optics express"

DOI: 10.1364/oe.25.014611

Abstract: We present a fully integrated InGaAs/InP negative feedback avalanche diode (NFAD) based free-running single-photon detector (SPD) designed for accurate lidar applications. A free-piston Stirling cooler is used to cool down the NFAD with a large… read more here.

Keywords: ingaas inp; detector; free running; photon detector ... See more keywords
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Temperature-dependent photon detection efficiency model for InGaAs/InP SPADs.

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Published in 2022 at "Optics express"

DOI: 10.1364/oe.444536

Abstract: InGaAs/InP single-photon avalanche diodes (SPADs) are nowadays employed in many photon-counting applications in the near-infrared range. Photon detection efficiency (PDE) is one of the most important parameters of these detectors and here we present a… read more here.

Keywords: model; photon detection; detection efficiency; ingaas inp ... See more keywords
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Low-noise InGaAs/InP single-photon detector with widely tunable repetition rates

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Published in 2019 at "Photonics Research"

DOI: 10.1364/prj.7.0000a1

Abstract: InGaAs/InP avalanche photodiodes typically work in the gated Geiger mode to achieve near-infrared single-photon detection. By using ultrashort gates and combining with the robust spike-canceling technique that consists of the capacitance-balancing and low-pass filtering technique,… read more here.

Keywords: inp single; ingaas inp; single photon;