Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
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DOI: 10.3390/ma15031071
Abstract: We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission… read more here.
Keywords: metamorphic buffer; qds grown; electronic optical; ingaas metamorphic ... See more keywords