Enhanced terahertz emission from strain-induced InGaAs/InAlAs superlattices
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DOI: 10.1063/1.5079697
Abstract: We propose, fabricate, and evaluate strain-induced InGaAs/InAlAs superlattice (SL), which can efficiently radiate broadband terahertz (THz) waves. By means of optical pump-probe measurements, we demonstrate ultrashort photocarriers relaxation times of τ ∼ 1.7 ps without… read more here.
Keywords: ingaas inalas; photoconductive layers; residual strain; ingaas photoconductive ... See more keywords