Investigation of the relation between photoluminescence intensity and decay time reduction with plasmon effect in InGaAs quantum dots
Sign Up to like & getrecommendations! Published in 2019 at "Current Applied Physics"
DOI: 10.1016/j.cap.2019.05.005
Abstract: Abstract Plasmonic effects on photoluminescence are investigated via time-integrated and resolved photoluminescence (PL) in epitaxially grown InGaAs quantum dots (QDs). The decay time and PL intensities are compared as a function of the density of… read more here.
Keywords: quantum dots; time; intensity; ingaas quantum ... See more keywords
Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 μm emission enabled by ripening process
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.157783
Abstract: Abstract We report molecular beam epitaxy of InAs quantum dash-in-a-well (DWELL) on InP for 2 μm wavelength emission using intentional ripening. By inserting the quantum dashes into a 10 nm InGaAs quantum well and employing… read more here.
Keywords: dash well; emission; inas ingaas; optical properties ... See more keywords
3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c06071
Abstract: InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of… read more here.
Keywords: coherent diffraction; quantum; geometry; ingaas quantum ... See more keywords
Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4996058
Abstract: The optical anisotropy of InGaAs quantum dot (QD) arrays on vicinal GaAs(111)B is investigated, in which the QDs are aligned and their shape is elongated along the [-110] direction. Polarised photoluminescence (PL) studies showed that… read more here.
Keywords: quantum dot; multiatomic steps; optical anisotropy; anisotropy ... See more keywords
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5041908
Abstract: We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage… read more here.
Keywords: operation inas; gbit operation; dark current; inas ingaas ... See more keywords
Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review B"
DOI: 10.1103/physrevb.103.115303
Abstract: We present atomistic computations within an empirical pseudopotential framework for the electron $s$-shell ground state $g$-tensor of embedded InGaAs quantum dots (QDs). A large structural set consisting of geometry, size, molar fraction and strain variations… read more here.
Keywords: quantum dots; ground state; ingaas quantum; electron ... See more keywords
Intensity noise behavior of an InAs/InGaAs quantum dot laser emitting on ground states and excited states.
Sign Up to like & getrecommendations! Published in 2018 at "Optics letters"
DOI: 10.1364/ol.43.000867
Abstract: We experimentally and numerically study the amplitude stability of an InAs/InGaAs quantum dot laser emitting simultaneously on ground states (GSs) and excited state (ESs) at center wavelengths of 1245 and 1168 nm, respectively. The stability is… read more here.
Keywords: laser; quantum dot; dot laser; inas ingaas ... See more keywords