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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5016282
Abstract: The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP grown by molecular beam epitaxy are investigated. When InGaAs:Rh is used as an ultrafast photoconductor, carrier lifetimes as short as…
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Keywords:
ingaas superior;
photoconductor;
doped ingaas;
ultrafast photoconductor ... See more keywords