Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques
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DOI: 10.1016/j.apsusc.2017.10.032
Abstract: Abstract This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order… read more here.
Keywords: ingaasn films; surface; spectroscopy; ray photoelectron ... See more keywords