MOVPE grown 1.0 eV InGaAsP solar cells with bandgap-voltage offset near to ideal radiative recombination limit
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DOI: 10.1016/j.solmat.2019.03.032
Abstract: Abstract We report on the study of 1.0 eV InGaAsP solar cells grown by metalorganic vapor phase epitaxy (MOVPE) on InP. Under standard one-sun air-mass 0 (AM0) illumination, InGaAsP single junction solar cell grown at temperature… read more here.
Keywords: solar cells; voltage; ingaasp solar; movpe grown ... See more keywords