Semipolar ($$ 1\bar{1}01 $$11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science"
DOI: 10.1007/s10853-019-03473-0
Abstract: The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped… read more here.
Keywords: light emitting; ingan; 100 substrate; ingan gan ... See more keywords
Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.
Sign Up to like & getrecommendations! Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b22569
Abstract: A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n+ type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type… read more here.
Keywords: broad band; photodetector; self; powered broad ... See more keywords
High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5051685
Abstract: In this paper, high performance InGaN double channel (DC) high electron mobility transistors (HEMTs) are proposed and systematically investigated. Due to the coordination of double InGaN channels, a large maximum drain current density and a… read more here.
Keywords: ingan channels; performance; ingan; ingan double ... See more keywords
Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well
Sign Up to like & getrecommendations! Published in 2019 at "Applied Sciences"
DOI: 10.3390/app9153004
Abstract: We demonstrate an ultra-low efficiency droop in c-plane polar InGaN blue light-emitting diodes (LEDs) by reducing the carrier density using a wide InGaN last quantum well (LQW). It is found that the LEDs with a… read more here.
Keywords: efficiency droop; carrier density; density; ingan ... See more keywords
Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12050800
Abstract: Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the… read more here.
Keywords: green yellow; ingan; epitaxy; growth ... See more keywords
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac1b3e
Abstract: The full InGaN structure was grown on two different InGaNOS substrates from Soitec. An electron blocking layer was inserted in the full InGaN light emitting diode (LED). Enhanced internal quantum efficiency of red emitting InGaN/InGaN… read more here.
Keywords: 625 micro; full ingan; red 625; ingan ... See more keywords