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   Articles with "ingan based" as a keyword



Nitrogen doped ultrananocrystalline diamond conductive layer grown on InGaN-based light-emitting diodes using nanopattern enhanced nucleation

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recommendations! Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2021.149052

Abstract: Abstract This study grew nitrogen doped ultrananocrystalline diamond (N-UNCD) conductive layer on InGaN-based light emitting diodes (LEDs) using the concave nanopattern (CNP) enhanced nucleation. The low nucleation density of the N-UNCD on bare LEDs (Br-LED)… read more here.

Keywords: nitrogen doped; conductive layer; nucleation; ingan based ... See more keywords

Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region

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recommendations! Published in 2018 at "Optical Materials"

DOI: 10.1016/j.optmat.2018.09.017

Abstract: Abstract InGaN based LEDs with V-pits structure and consists of n-GaN, In0.1Ga0.9N/GaN superlattices (SLs), In0.15Ga0.85N blue quantum wells (BQWs), In0.25Ga0.75N green quantum wells (GQWs) and p-GaN were grown on Si substrate. Carrier transportation is studied… read more here.

Keywords: leds pits; ingan based; carrier transportation; pits structure ... See more keywords

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

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recommendations! Published in 2020 at "Optical Materials"

DOI: 10.1016/j.optmat.2020.110477

Abstract: Abstract A graded-compositional waveguide structure is proposed to improve the optical field distribution of InGaN-based green laser diodes (LDs). It is found that the optical field leaking into the GaN substrate is suppressed obviously when… read more here.

Keywords: based green; compositional waveguide; ingan based; waveguide structure ... See more keywords

Carrier transport mechanisms of InGaN-based light-emitting diodes using a single pulsed current

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recommendations! Published in 2019 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2019.02.009

Abstract: Abstract The current-voltage characteristics of InGaN-based light-emitting diodes (LEDs) with various In compositions are analyzed. The emission spectra and ideality factors of ultraviolet, violet, and blue LEDs are investigated in a single pulsed current mode.… read more here.

Keywords: based light; ingan based; density; carrier ... See more keywords

Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

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recommendations! Published in 2017 at "Scientific Reports"

DOI: 10.1038/s41598-017-11239-4

Abstract: In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied… read more here.

Keywords: color; algainp based; based green; ingan based ... See more keywords

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

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recommendations! Published in 2024 at "Scientific Reports"

DOI: 10.1038/s41598-024-57132-9

Abstract: This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can… read more here.

Keywords: wavelength ingan; long wavelength; micro; high performance ... See more keywords
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Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication

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recommendations! Published in 2018 at "Applied Physics Letters"

DOI: 10.1063/1.5022298

Abstract: Triangular-lattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN… read more here.

Keywords: aln substrates; ingan based; selective area; area growth ... See more keywords

High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

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recommendations! Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/5.0026017

Abstract: We herein report the growth of phosphor-free InGaN-based white light-emitting diodes (LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red InGaN quantum wells (QWs). To improve the current injection and generate… read more here.

Keywords: ingan based; injection; free ingan; white light ... See more keywords
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Improved wavelength stability and heat dissipation of InGaN-based light-emitting diodes using a graphene interlayer on patterned sapphire substrate

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recommendations! Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0135040

Abstract: This study presents a straightforward strategy that embeds a graphene interlayer between InGaN-based light-emitting diodes (InGaN LEDs) and patterned sapphire substrate (PSS substrate) for substantial improving device performances of wavelength stability and heat dissipation. The… read more here.

Keywords: graphene interlayer; heat; substrate; ingan based ... See more keywords

Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0192430

Abstract: The optical and chromatic characteristics of InGaN-based micro-light-emitting diodes (micro-LEDs) grown on silicon substrates with blue, green, and red emissions have been investigated. The red micro-LEDs exhibited a large full-width at half maximum and a… read more here.

Keywords: grown silicon; leds grown; micro; ingan based ... See more keywords

InGaN-based blue and red micro-LEDs: Impact of carrier localization

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recommendations! Published in 2024 at "Applied Physics Reviews"

DOI: 10.1063/5.0195261

Abstract: Herein, we investigate micro-light-emitting diodes (μLEDs) ranging in size from 160 × 160 to 10 × 10 μm2 and report that the differences in the behavior of InGaN-based blue (∼460 nm) and red (∼600 nm) μLEDs are related to carrier localization.… read more here.

Keywords: blue red; ingan based; carrier localization; carrier ... See more keywords