Nitrogen doped ultrananocrystalline diamond conductive layer grown on InGaN-based light-emitting diodes using nanopattern enhanced nucleation
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.149052
Abstract: Abstract This study grew nitrogen doped ultrananocrystalline diamond (N-UNCD) conductive layer on InGaN-based light emitting diodes (LEDs) using the concave nanopattern (CNP) enhanced nucleation. The low nucleation density of the N-UNCD on bare LEDs (Br-LED)… read more here.
Keywords: nitrogen doped; conductive layer; nucleation; ingan based ... See more keywords
Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region
Sign Up to like & getrecommendations! Published in 2018 at "Optical Materials"
DOI: 10.1016/j.optmat.2018.09.017
Abstract: Abstract InGaN based LEDs with V-pits structure and consists of n-GaN, In0.1Ga0.9N/GaN superlattices (SLs), In0.15Ga0.85N blue quantum wells (BQWs), In0.25Ga0.75N green quantum wells (GQWs) and p-GaN were grown on Si substrate. Carrier transportation is studied… read more here.
Keywords: leds pits; ingan based; carrier transportation; pits structure ... See more keywords
Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials"
DOI: 10.1016/j.optmat.2020.110477
Abstract: Abstract A graded-compositional waveguide structure is proposed to improve the optical field distribution of InGaN-based green laser diodes (LDs). It is found that the optical field leaking into the GaN substrate is suppressed obviously when… read more here.
Keywords: based green; compositional waveguide; ingan based; waveguide structure ... See more keywords
Carrier transport mechanisms of InGaN-based light-emitting diodes using a single pulsed current
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.02.009
Abstract: Abstract The current-voltage characteristics of InGaN-based light-emitting diodes (LEDs) with various In compositions are analyzed. The emission spectra and ideality factors of ultraviolet, violet, and blue LEDs are investigated in a single pulsed current mode.… read more here.
Keywords: based light; ingan based; density; carrier ... See more keywords
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-11239-4
Abstract: In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied… read more here.
Keywords: color; algainp based; based green; ingan based ... See more keywords
Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022298
Abstract: Triangular-lattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN… read more here.
Keywords: aln substrates; ingan based; selective area; area growth ... See more keywords
High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0026017
Abstract: We herein report the growth of phosphor-free InGaN-based white light-emitting diodes (LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red InGaN quantum wells (QWs). To improve the current injection and generate… read more here.
Keywords: ingan based; injection; free ingan; white light ... See more keywords
Improved wavelength stability and heat dissipation of InGaN-based light-emitting diodes using a graphene interlayer on patterned sapphire substrate
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0135040
Abstract: This study presents a straightforward strategy that embeds a graphene interlayer between InGaN-based light-emitting diodes (InGaN LEDs) and patterned sapphire substrate (PSS substrate) for substantial improving device performances of wavelength stability and heat dissipation. The… read more here.
Keywords: graphene interlayer; heat; substrate; ingan based ... See more keywords
The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence*
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/34/7/077301
Abstract: InGaN-based green light-emitting diodes (LEDs) with different growth temperatures of superlattice grown on Si (111) substrates are investigated by temperature-dependent electroluminescence between 100 K and 350 K. It is observed that with the decrease of… read more here.
Keywords: based green; temperature; leds different; ingan based ... See more keywords
Photoluminescence of InGaN-based red multiple quantum wells.
Sign Up to like & getrecommendations! Published in 2021 at "Optics express"
DOI: 10.1364/oe.439025
Abstract: Optical properties of InGaN-based red LED structure, with a blue pre-well, are reported. Two emission peaks located at 445.1 nm (PB) and 617.9 nm (PR) are observed in the PL spectrum, which are induced by… read more here.
Keywords: based red; ingan based; photoluminescence ingan; electric field ... See more keywords
Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.459877
Abstract: Electrical and optical characteristics of InGaN-based green micro-light-emitting diodes (µLEDs) with different active areas are investigated; results are as follows. Reverse and forward leakage currents of µLED increase as emission area is reduced owing to… read more here.
Keywords: based green; ingan based; light emitting; sidewall ... See more keywords