Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics
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DOI: 10.3390/cryst15010056
Abstract: This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key… read more here.
Keywords: layer; cap layer; contact; barrier height ... See more keywords