Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "AIP Advances"
DOI: 10.1063/1.5129112
Abstract: In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail. Due to the decent electron confinement of InGaN channel heterostructures, a high… read more here.
Keywords: channel heterostructures; ingan channel; channel sbds; room temperature ... See more keywords
InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.094101
Abstract: High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated and investigated in detail. The transconductance exhibits a high stability over a wide range of gate voltages, indicating excellent operation linearity. The relative saturation output current densities are… read more here.
Keywords: channel high; high electron; ingan channel; performance ... See more keywords