High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
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DOI: 10.1063/1.5051685
Abstract: In this paper, high performance InGaN double channel (DC) high electron mobility transistors (HEMTs) are proposed and systematically investigated. Due to the coordination of double InGaN channels, a large maximum drain current density and a… read more here.
Keywords: ingan channels; performance; ingan; ingan double ... See more keywords