High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5051685
Abstract: In this paper, high performance InGaN double channel (DC) high electron mobility transistors (HEMTs) are proposed and systematically investigated. Due to the coordination of double InGaN channels, a large maximum drain current density and a… read more here.
Keywords: ingan channels; performance; ingan; ingan double ... See more keywords
On the design and performance of InGaN/Si double-junction photocathodes
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0050708
Abstract: Through a combined theoretical and experimental study, we have investigated the synthesis and performance characteristics of InGaN/Si double-junction photoelectrochemical (PEC) water splitting devices, which promise a theoretical solar-to-hydrogen conversion efficiency ∼30% under AM 1.5G one-sun… read more here.
Keywords: double junction; design performance; junction photocathodes; performance ... See more keywords