Stacking faults in plastically relaxed InGaN epilayers
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab6bb1
Abstract: Relaxed InGaN layers have recently gained a lot of interest as potential pseudo-substrates for InGaN-based devices. In this work we study PAMBE grown thick In0.2Ga0.8N layers relaxed through the formation of (a+c)-type misfit dislocations. We… read more here.
Keywords: faults plastically; relaxed ingan; configuration; stacking faults ... See more keywords
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12213887
Abstract: We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and… read more here.
Keywords: composition uniformity; presence metal; liquid solid; metal droplets ... See more keywords