Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Engineering Materials"
DOI: 10.1002/adem.202001430
Abstract: Micro/nanowire light‐emitting diodes (LEDs) have inspired considerable research interests due to their potential applications in microdisplays and micro/nano‐optoelectronic integrated systems. Herein, a single InGaN/GaN multiple‐quantum‐well (MQW) microwire‐based flexible LED with high‐efficiency current injection and spreading… read more here.
Keywords: ingan gan; gan multiple; light emitting; single ingan ... See more keywords
Monolithic Integration of GaN Thin Film and GaN Nanorods Pixels: Facile Growth of InGaN/GaN Quantum Wells for the Realization of Full Color Micro‐LED Display
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Optical Materials"
DOI: 10.1002/adom.202500271
Abstract: In this work, an innovative method is introduced for fabricating large‐area micro‐LEDs (µLEDs) specifically for green and blue emission through a combination of GaN thin film and GaN nanorods (NRs) on the orientation‐controlled template designed… read more here.
Keywords: controlled template; gan thin; thin film; orientation controlled ... See more keywords
A Self‐Powered Photoelectrochemical Detection Device Using Scalable InGaN/GaN Nanowire Arrays
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Optical Materials"
DOI: 10.1002/adom.202502536
Abstract: Photoelectrochemical photodetectors (PEC‐PDs) offer several advantages, including simple and low‐cost fabrication, self‐powered operation, high photoresponse, and strong environmental sensitivity. In this work, we report the self‐powered PEC photodetection characteristics of nanowire (NW)‐based, green‐emitting InGaN/GaN multiple… read more here.
Keywords: powered photoelectrochemical; device; nanowire; self powered ... See more keywords
Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Science"
DOI: 10.1002/advs.202408736
Abstract: Elastic relaxation of lattice misfit strain via traction‐free surface results in complex 3D strain distribution and morphological modification at the boundary of epitaxial heterostructure. While this phenomenon is extensively studied, the influence of the interface… read more here.
Keywords: elastic relaxation; relaxation coherent; relaxation; coherent ingan ... See more keywords
Semipolar ($$ 1\bar{1}01 $$11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science"
DOI: 10.1007/s10853-019-03473-0
Abstract: The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped… read more here.
Keywords: light emitting; ingan; 100 substrate; ingan gan ... See more keywords
Determination of poisson’s ratio using growth temperature variations of InGaN/GaN MQW
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04055-6
Abstract: In this study, InGaN/GaN/Al 2 O 3 multi-quantum well (MQW) structure is investigated in 300–450 °C growth temperature range with steps of 50 °C. By the help of lattice constants at four different growth temperatures… read more here.
Keywords: poisson ratio; growth temperature; growth; ingan gan ... See more keywords
Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08098-7
Abstract: The photoluminescence (PL) characteristics of two violet light-emitting InGaN/GaN multiple quantum well structures with different GaN barrier thickness, grown by metalorganic chemical vapor deposition, are investigated. It is found that for the sample with thick… read more here.
Keywords: quantum; barrier; ingan gan; violet light ... See more keywords
Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes
Sign Up to like & getrecommendations! Published in 2024 at "Frontiers of Optoelectronics"
DOI: 10.1007/s12200-024-00111-9
Abstract: InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa… read more here.
Keywords: efficiency; structure; micro; insulator ... See more keywords
Improving performance of light-emitting diodes using InGaN/GaN MQWs with varying trapezoidal bottom well width
Sign Up to like & getrecommendations! Published in 2021 at "Optik"
DOI: 10.1016/j.ijleo.2021.167888
Abstract: Abstract We report the optical performance of four InGaN/GaN multiple quantum well (MQW) blue LEDs with different bottom base widths- LED A. InGaN/GaN rectangular shaped quantum wells (QWs) with well width of 2 nm, LED B.… read more here.
Keywords: bottom base; performance; trapezoidal bottom; bottom ... See more keywords
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159851
Abstract: Abstract The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs) structures grown by metal-organic chemical vapor deposition (MOCVD) with varying hydrogen (H2) treatments after GaN cap layer growth are investigated to elucidate the role… read more here.
Keywords: growth; treatment; photoluminescence properties; properties ingan ... See more keywords
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.061
Abstract: Abstract InGaN/GaN heterostructured samples were grown at different temperatures varying from 680 °C to 760 °C on c -plane sapphire substrates using a horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Systematic investigation of structural, optical,… read more here.
Keywords: temperature; growth temperature; ingan gan; gan heterostructures ... See more keywords