Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Engineering Materials"
DOI: 10.1002/adem.202001430
Abstract: Micro/nanowire light‐emitting diodes (LEDs) have inspired considerable research interests due to their potential applications in microdisplays and micro/nano‐optoelectronic integrated systems. Herein, a single InGaN/GaN multiple‐quantum‐well (MQW) microwire‐based flexible LED with high‐efficiency current injection and spreading… read more here.
Keywords: ingan gan; gan multiple; light emitting; single ingan ... See more keywords
Semipolar ($$ 1\bar{1}01 $$11¯01) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science"
DOI: 10.1007/s10853-019-03473-0
Abstract: The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content on Si (100) substrate faces significant challenges. The study described in this paper focuses on semipolar yellow InGaN/GaN LEDs formed on a triangular-striped… read more here.
Keywords: light emitting; ingan; 100 substrate; ingan gan ... See more keywords
Determination of poisson’s ratio using growth temperature variations of InGaN/GaN MQW
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04055-6
Abstract: In this study, InGaN/GaN/Al 2 O 3 multi-quantum well (MQW) structure is investigated in 300–450 °C growth temperature range with steps of 50 °C. By the help of lattice constants at four different growth temperatures… read more here.
Keywords: poisson ratio; growth temperature; growth; ingan gan ... See more keywords
Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness
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DOI: 10.1007/s11664-020-08098-7
Abstract: The photoluminescence (PL) characteristics of two violet light-emitting InGaN/GaN multiple quantum well structures with different GaN barrier thickness, grown by metalorganic chemical vapor deposition, are investigated. It is found that for the sample with thick… read more here.
Keywords: quantum; barrier; ingan gan; violet light ... See more keywords
Improving performance of light-emitting diodes using InGaN/GaN MQWs with varying trapezoidal bottom well width
Sign Up to like & getrecommendations! Published in 2021 at "Optik"
DOI: 10.1016/j.ijleo.2021.167888
Abstract: Abstract We report the optical performance of four InGaN/GaN multiple quantum well (MQW) blue LEDs with different bottom base widths- LED A. InGaN/GaN rectangular shaped quantum wells (QWs) with well width of 2 nm, LED B.… read more here.
Keywords: bottom base; performance; trapezoidal bottom; bottom ... See more keywords
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159851
Abstract: Abstract The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs) structures grown by metal-organic chemical vapor deposition (MOCVD) with varying hydrogen (H2) treatments after GaN cap layer growth are investigated to elucidate the role… read more here.
Keywords: growth; treatment; photoluminescence properties; properties ingan ... See more keywords
Effect of growth temperature on InGaN/GaN heterostructures grown by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.061
Abstract: Abstract InGaN/GaN heterostructured samples were grown at different temperatures varying from 680 °C to 760 °C on c -plane sapphire substrates using a horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Systematic investigation of structural, optical,… read more here.
Keywords: temperature; growth temperature; ingan gan; gan heterostructures ... See more keywords
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.11.038
Abstract: Abstract The aim of this work is to elucidate how different growth mode and composition of barriers can influence the QW properties and their PL and to find optimal QW capping process, to suppress the… read more here.
Keywords: desorption; growth; temperature; interface ... See more keywords
Morphological study of InGaN on GaN substrate by supersaturation
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.12.028
Abstract: Abstract The morphology of thin InGaN layers grown on c-plane GaN substrates by metalorganic vapor phase epitaxy (MOVPE) has been studied by atomic force microscopy. Three different morphologies appeared, a stepped surface, large flat two-dimensional… read more here.
Keywords: morphological study; study ingan; supersaturation; gan substrate ... See more keywords
A promising approach for in-situ growth of phosphor-free white InGaN/GaN multiple quantum wells with V-pits
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2020.117520
Abstract: Abstract For comfortable interior and mood lighting, warm and natural white light with excellent color version is indispensable. Here, we reported a main progress that in-situ generation of V-pits in InGaN/GaN layers intentionally to realize… read more here.
Keywords: multiple quantum; ingan gan; situ; quantum wells ... See more keywords
Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect
Sign Up to like & getrecommendations! Published in 2019 at "Nano Energy"
DOI: 10.1016/j.nanoen.2018.12.036
Abstract: Abstract InGaN-based photovoltaics (PV) devices have attracted great attentions because of the excellent photoelectric performance over the past decades. The photocurrent of the InGaN/GaN MQWs solar cells could be further improved by coupling plasmonic with… read more here.
Keywords: mqws solar; solar cells; coupling plasmonic; effect ... See more keywords