Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes
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DOI: 10.1016/j.spmi.2017.11.058
Abstract: Abstract We investigate carrier localization effect and recombination dynamics of 530 nm InGaN green light-emitting diodes (LEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) methods. Two distinct emission peaks located in low-energy and high-energy sides… read more here.
Keywords: 530 ingan; green light; emitting diodes; ingan green ... See more keywords