Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate.
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DOI: 10.1364/oe.27.024717
Abstract: A nonpolar edge emitting thin film InGaN laser diode has been separated from its native substrate by mechanical tearing with adhesive tape, combining the benefits of Epitaxial Lateral Overgrowth (ELO) and cleavability of nonpolar GaN… read more here.
Keywords: laser diode; thin film; ingan laser; epitaxial lateral ... See more keywords