Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.151803
Abstract: Abstract InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 μmol/min. The structural, morphological, optical and electrical properties of InGaN… read more here.
Keywords: microscopy; organic chemical; ingan layers; flow rate ... See more keywords
Effect of different buffer layers on the quality of InGaN layers grown on Si
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5046756
Abstract: This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction… read more here.
Keywords: buffer layers; ingan layers; effect; quality ingan ... See more keywords
Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE
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DOI: 10.1063/5.0047674
Abstract: We report on the stimulated emission (SE) in the near-infrared range from the planar InGaN epitaxial layers grown on sapphire substrates. By varying the indium content from 100% to 75%, the emission wavelength is tunable… read more here.
Keywords: ingan layers; near infrared; indium; layers grown ... See more keywords
Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations
Sign Up to like & getrecommendations! Published in 2019 at "Applied Sciences"
DOI: 10.20944/preprints201903.0253.v1
Abstract: InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral… read more here.
Keywords: carrier dynamics; ingan layers; dynamics ingan; ingan gan ... See more keywords