Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08159-x
Abstract: Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection efficiency of holes into… read more here.
Keywords: ingan quantum; quantum wells; laser diodes; photoluminescence ... See more keywords
Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4994945
Abstract: An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to… read more here.
Keywords: yellow green; range; tuning range; ingan quantum ... See more keywords
Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5008720
Abstract: Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge of large in-built fields, decreasing the oscillator strength and possible emission rates… read more here.
Keywords: non polar; polar ingan; highly polarized; ingan quantum ... See more keywords
Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab4b93
Abstract: InGaN quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) and shown to exhibit a bimodal size distribution. Atom probe tomography (APT) was used to characterize the dots in conjunction with atomic force… read more here.
Keywords: metalorganic chemical; chemical vapor; vapor deposition; ingan quantum ... See more keywords
Photon bunching reveals single-electron cathodoluminescence excitation efficiency in InGaN quantum wells
Sign Up to like & getrecommendations! Published in 2017 at "Physical Review B"
DOI: 10.1103/physrevb.96.035308
Abstract: Cathodoluminescence spectroscopy is a key analysis technique in nanophotonics research and technology, yet many aspects of its fundamental excitation mechanisms are not well understood on the single-electron and single-photon level. Here, we determine the cathodoluminescence… read more here.
Keywords: single electron; ingan quantum; cathodoluminescence; excitation ... See more keywords
Three-Photon Excitation of InGaN Quantum Dots.
Sign Up to like & getrecommendations! Published in 2023 at "Physical review letters"
DOI: 10.1103/physrevlett.130.083602
Abstract: We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, while resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multiphoton processes… read more here.
Keywords: three photon; excitation; quantum dots; photon excitation ... See more keywords
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes.
Sign Up to like & getrecommendations! Published in 2022 at "Optics letters"
DOI: 10.1364/ol.452477
Abstract: High-efficiency GaN-based green LEDs are of paramount importance to the development of the monolithic integration of multicolor emitters and full-color high-resolution displays. Here, the InGaN quantum well with gradually varying indium (In) content was proposed… read more here.
Keywords: gan based; green leds; content green; efficiency ... See more keywords
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
Sign Up to like & getrecommendations! Published in 2019 at "Materials"
DOI: 10.3390/ma12162583
Abstract: InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and… read more here.
Keywords: indium incorporation; ingan quantum; quantum wells; wells grown ... See more keywords
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Sign Up to like & getrecommendations! Published in 2021 at "Materials"
DOI: 10.3390/ma15010237
Abstract: The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here,… read more here.
Keywords: dependence ingan; ingan quantum; well thickness; optical transitions ... See more keywords
Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13081346
Abstract: InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of green… read more here.
Keywords: quantum dots; micro leds; molecular beam; micro ... See more keywords
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13081367
Abstract: A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the device characteristics have… read more here.
Keywords: composition; emission spectra; quantum dot; local composition ... See more keywords