InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors
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DOI: 10.3390/app11010008
Abstract: InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN… read more here.
Keywords: ingan resonant; dbr; cavity light; resonant cavity ... See more keywords