Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c01286
Abstract: Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA),… read more here.
Keywords: ingazno; low temperature; ultraviolet assisted; high performance ... See more keywords
Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Chemistry C"
DOI: 10.1039/c6tc04709b
Abstract: Passivating trap defects and controlling carrier concentration and doping profiles in the functional dielectric and channel layers is a prerequisite for designing high performance electronic devices. Here, we investigate the effects of dielectric interface trap… read more here.
Keywords: modulation; passivation; graded channel; ingazno ... See more keywords
Improved Detectivity of Flexible a-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2933503
Abstract: Amorphous InGaZnO (a-IGZO) UV photodetectors with a metal-semiconductor-metal structure were fabricated on polyethylene terephthalate (PET) substrates, and the effects of surface fluorine plasma treatment on a-IGZO were investigated. With this treatment, the oxygen vacancies (Ovac’s)… read more here.
Keywords: ingazno; treatment; plasma treatment; surface fluorine ... See more keywords