LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory
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DOI: 10.35848/1882-0786/ab88c1
Abstract: This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices… read more here.
Keywords: ingazno resistive; retention fail; retention; resistive switching ... See more keywords