One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
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DOI: 10.3390/nano12193481
Abstract: Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in… read more here.
Keywords: amorphous ingazno; ingazno tfts; temperature; room temperature ... See more keywords