The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces
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DOI: 10.3390/ma15175895
Abstract: In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics. In the temperature range of 80–280 K, the ideality factor (n) and energy barrier height (φb)… read more here.
Keywords: barrier heights; inhomogeneities diamond; heights inhomogeneities; temperature ... See more keywords