Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices
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DOI: 10.1007/s10825-017-1043-2
Abstract: HfO$$_2$$2-based memristive switching devices are currently under intensive investigation due to their high performance and mature fabrication techniques. However, several critical issues have to be addressed to bring them from laboratory to market. We have… read more here.
Keywords: oxygen; modeling transport; conductance; initio modeling ... See more keywords
Ab initio modeling of dislocation core properties in metals and semiconductors
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DOI: 10.1016/j.actamat.2016.09.049
Abstract: Abstract Dislocation cores, the regions in the immediate vicinity of dislocation lines, control a number of properties such as dislocation mobility, cross-slip and short-range interactions with other defects. The quantitative modeling of dislocation cores requires… read more here.
Keywords: modeling dislocation; dislocation cores; dislocation core; dislocation ... See more keywords