Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition
Sign Up to like & getrecommendations! Published in 2024 at "Crystal Research and Technology"
DOI: 10.1002/crat.202400124
Abstract: Direct InN growth is demonstrated and characterized on a sapphire (Al2O3) substrate by plasma‐enhanced metal–organic chemical vapor deposition using high‐density nitrogen (N2) microstrip‐line microwave plasma. N2 plasma irradiation at 650 °C for 20 min forms… read more here.
Keywords: enhanced metal; plasma enhanced; inn; substrate ... See more keywords
Promotion of H2 adsorption performance on InN monolayer by embedding Cu atom: A first-principles study
Sign Up to like & getrecommendations! Published in 2020 at "International Journal of Hydrogen Energy"
DOI: 10.1016/j.ijhydene.2020.09.185
Abstract: Abstract Hydrogen energy as a clean energy has great application potential, and finding efficient hydrogen storage materials has become the current research hotspot. This work studied the structure, electronic properties, thermodynamic properties and H2 adsorption… read more here.
Keywords: atom; adsorption; energy; inn ... See more keywords
InN superconducting phase transition
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-48783-0
Abstract: InN superconductivity is very special among III–V semiconductors, as other III–V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. Here, we probe… read more here.
Keywords: inn superconducting; transition; inn; phase transition ... See more keywords
Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films
Sign Up to like & getrecommendations! Published in 2020 at "RSC Advances"
DOI: 10.1039/d0ra04567e
Abstract: In this work, we have studied the role varying nitrogen plasma compositions play in the low-temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited on Si (100) substrates using a plasma-enhanced atomic… read more here.
Keywords: plasma; temperature; inn; nitrogen plasma ... See more keywords
Ultra-high absorption efficiency of InN nanowires with a wide bandwidth in the short-wave infrared range.
Sign Up to like & getrecommendations! Published in 2025 at "Nanoscale"
DOI: 10.1039/d4nr04586f
Abstract: The group III-V semiconductor InN is a highly promising candidate for photoelectric detectors in the short-wave infrared (SWIR) range but faces significant challenges in material quality. In recent years, one-dimensional nanowires (NWs) have allowed their… read more here.
Keywords: inn; wave infrared; absorption; range ... See more keywords
Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5009904
Abstract: N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and… read more here.
Keywords: direction; inn; quantum dot; step direction ... See more keywords
In-polar InN growth diagram by MOVPE
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0283556
Abstract: The structural properties of wurtzite (WZ) In-polar InN layers grown by metal-organic vapor phase epitaxy (MOVPE) on GaN (0001) templates were systematically studied by varying the growth temperature (380–565 °C) and pressure (600–1500 hPa). WZ-phase InN layers… read more here.
Keywords: temperature; polar inn; inn; movpe ... See more keywords
InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac06e4
Abstract: Indium nitride (InN) is a very promising direct bandgap semiconductor material for near-infrared optoelectronic devices and high speed transistors, however InN growth is much more challenging compared to other III-N semiconductors. In this study we… read more here.
Keywords: inn crystal; crystal habit; inn; nitridation ... See more keywords
Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns
Sign Up to like & getrecommendations! Published in 2021 at "Catalysts"
DOI: 10.3390/catal11060737
Abstract: In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated… read more here.
Keywords: time resolved; energy dependent; dependent time; inn ... See more keywords
Factors Affecting Inn Operators’ Willingness to Pay Resource Protection Fees: A Case of Erhai Lake in China
Sign Up to like & getrecommendations! Published in 2018 at "Sustainability"
DOI: 10.3390/su10114049
Abstract: Willingness to pay (WTP) is a foundation of payment for environmental services (PES) and varies according to different stakeholders. Because of its high-quality environment, numerous inns have appeared around Erhai Lake, which has become the… read more here.
Keywords: resource protection; inn operators; inn; willingness pay ... See more keywords