Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
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DOI: 10.1063/1.5100066
Abstract: InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si (111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) laser ( λ = 1550 nm, power density ∼… read more here.
Keywords: barrier heights; barrier; inn aln; aln 111 ... See more keywords