Boron doped GaN and InN: Potential candidates for spintronics
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DOI: 10.1063/1.4976815
Abstract: The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting… read more here.
Keywords: boron doped; doped gan; potential candidates; candidates spintronics ... See more keywords